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Title: Aspects of Environmental Safety and Health Abstract: The importance of understanding the interactions between nanoscale materials and living matter has now been appreciated by an extraordinarily range of stakeholders. However, the challenges associated with understanding the impacts of nanomaterials on living systems are enormous, many of them quite detailed and practical. Both OECD and ISO are active in the issue, and OECD is currently maturing a wide range of relevant guidance documents. In response to these challenges, and the increasing need for clarification of the potential risks associated with nanotechnology, a group of the leading international scientists in the arena came together in 2008 to establish the International Alliance for NanoEHS Harmonisation (http://nanoehsalliance.org/) . The aim is to test approaches and protocols for the reproducible study of nanoparticle interactions with living organisms, with an emphasis on supporting more formal and structured world wide efforts (such as those in OECD and ISO), by performing a set of round robin experiments to establish protocols that would be shared with other researchers. Some of the challenges, pitfalls, and successes of the effort will be discussed. Results of smaller scale pioneer round robins within the group are discussed, and used to show the strength and reliability of the results that emerge. Richard Fisher Title: NIH Facilities Abstract:
Title: US Industry's Nanoelectronics Initiatives and Results Abstract: The National Nanotechnology Initiative (NNI) was launched in the year 2000 in the United Sates under Dr. Mike Roco. In October 2003, for the first time, Government Organizations, Industry, and University gathered to compare programs and synchronize their activities. As a result of this meeting the Nanoelectronics Research Initiative (NRI) was approved by the SIA Board in 2004 with the goal of "Demonstrating a novel computing device capable of replacing the CMOS FET as a logic switch by 2020". The first joint solicitations, with the National Science Foundation (NSF), were sent out in September 2005. Since then four centers of excellence have been sequentially formed: WIN, INDEX, SWAN and MIND. In addition, in 2008 the National Institute of Standards and Technology (NIST) became a full member of NRI.  \
Heinz Gerhaeuser Title: Abstract:
Kohmei Halada Title: Nano-alchemy Saves Resource Crisis Abstract: Regarding resource providing crisis, the Japanese government has launched a new research project based on material science and nanotechnology, "Elements Science and Technology". The consumption of metal to the year 2050 is forecasted, in which the consumption of most kinds of metals will overrun the amount of the existing verified reserves. The ways to relieve the resource risk are improving resource efficiency, recycling, and substitution to use common resources. The new project aims at the establishment of the scientific bases for these technologies.
Barbara Herr Harthorn Abstract: This presentation focuses on nanotechnologies in their societal context and the research conducted in the NSF Nanotechnology in Society Network. Founded in 2005, the network includes 2 Nanoscale Science and Engineering Centers: the Centers for Nanotechnology in Society at UCSB and at ASU, as well as a series of projects funded by the NSF. The presentation discusses the range of research on the social, cultural, historical, economic, and political aspects of nanotechnologies in global and domestic US contexts, conducted at sites throughout the US (and their international collaborators), and the network for interdisciplinary collaboration developed by the researchers. One main aim of the Network is to address the mandate of the NNI through its authorization bill (the 21st Century Nanotechnology Research and Development Act) for "responsible development" of nanotechnology, which includes and accounts for views and concerns of the public. Using research at the CNS-UCSB as an example, the talk discusses the main contributions of the network, points of connection w/ the Nanoscale Science & Engineering community, educational programs on nanotech in society and their integration into the NSE curriculum, and the policy relevance of research outcomes from this still in-the-making social science research enterprise.
Marc Heyns Title: Ge and III/V devices on Silicon for advanced CMOS Abstract: High mobility channel materials and new device structures will be needed to meet the power and performance specifications in future technology nodes. High-performance CMOS can be obtained by combining Ge pMOS devices with nMOS devices made on III/V compounds such as InGaAs or, alternatively, materials such as InSb combined with strain engineering can be used for both nMOS and pMOS devices. All these materials can be introduced on Si-wafers by selective EPI or MOCVD growth. The key challenge is the electrical passivation of the interface between the high-k dielectric and the alternative channel materials. By exploring a wide range of surface preparation treatments and high-k dielectrics in combination with extensive electrical analysis and ab-initio calculations a detailed understanding of the surface passivation of Ge and III/V materials was obtained. Since ultimately the major showstopper on the scaling roadmap is not device speed, but rather power density, the introduction of these advanced materials will go together with the introduction of new device concepts. Novel structures such as heterojunction TunnelFET's can fully exploit the properties of these new materials and provide superior performance at lower power consumption by virtue of their improved subthreshold behaviour, allowing to reduce the supply voltages. Vertical surround gate devices can be produced from nanowires allowing the introduction of a wide range of materials on Si. This opens new and exciting perspectives for future CMOS technologies. 
Chenming Hu University of California, Berkeley Title: A Green Transistor to Reduce IC Power Consumption by 10X? Abstract: IC power consumption is rising fast because Vdd scaling has slowed down. This is an issue of not only thermal management but also energy conservation. MOSFET suffers from a fundamental conflict between performance and leakage at low Vdd. A different transistor principal and mechanism is needed to break a path. Tunneling, which becomes increasingly difficult to avoid, may be just the right new mechanism for the Green Transistor.
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